规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0063 ohm, 10 V, 3.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.35 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
小信号肖特基二极管, 30 V, 300 mA, 400 mV, 1 A, 150 °C
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
快速/超快二极管, 单, 200 V, 20 A, 1.15 V, 45 ns, 200 A
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 132 A, 100 V, 0.0038 ohm, 10 V, 4 V
(EN)
VISHAY
肖特基整流器阵列, 双路 共阴极, 20A, TO-263AB
(EN)
MICRO COMMERCIAL COMPONENTS
标准恢复, 1A, 100V, DO-214AC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 0.0625 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 165 mohm, 4.5 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.011 ohm, 10 V, 1.9 V
(EN)
NEXPERIA
双极晶体管阵列, NPN, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC
(EN)
DIODES INC.
双极晶体管阵列, 双路, PNP, -60 V, 200 mW, -600 mA, 100 hFE, SOT-363
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V
(EN)
NEXPERIA
双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 100 hFE, SOT-143B
(EN)
NEXPERIA
单管二极管 齐纳, 12 V, 375 mW, SOD-123F, 2 %, 2 引脚, 150 °C
(EN)
VISHAY
快速/超快二极管, 单, 100 V, 2 A, 900 mV, 20 ns, 50 A
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 530 mohm, 10 V, 4 V
(EN)
NEXPERIA
单管二极管 齐纳, 33 V, 400 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
标准功率二极管, 1.2 kV, 60 A, 单, 1 V, 950 A
(EN)
