规格：工作温度最高值 150°C,
MULTICOMP
快速/超快二极管, 400 V, 2 A, 单, 1.3 V, 35 ns, 50 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -8V, 13.7A, SOIC
(EN)
NEXPERIA
单晶体管 双极, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 125 hFE
(EN)
MULTICOMP
单管二极管 齐纳, 11 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 44A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 9.4 mohm, 10 V, 4.9 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 44 A, 30 V, 0.0082 ohm, 8 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 通用, 18 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 70 V, 90 W, 15 A, 70 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -25 V, 200 MHz, 1 W, -1.5 A, 120 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 3 MHz, 25 W, 2 A, 3 hFE
(EN)
MICRO COMMERCIAL COMPONENTS
双极性晶体管, PNP, 40VDC, SOT-23
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 2 W, 10 A, 100 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 250 mohm, 10 V, 5 V
(EN)
