规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 1 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)
VISHAY
超快速二极管, 3A, 200V DO-210AD
(EN)
MULTICOMP
单晶体管 双极, NPN, 45 V, 250 mW, 100 mA, 90 hFE
(EN)
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 500mW, 5.1V, SOD-123
(EN)
VISHAY
齐纳二极管, 43V, 300mW, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 200 V, 140 mohm, 10 V, 5 V
(EN)
NEXPERIA
单管二极管 齐纳, 62 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
MULTICOMP
单管二极管 齐纳, 100 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, PNP, -40V, TO-92
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, 15 V, 2.5 V
(EN)
ROHM
单管二极管 齐纳, 3.6 V, 100 mW, SOD-923, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.5 A, 400 V, 0.43 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 13 A, 2.4 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)
DIODES INC.
双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 40 V, 0.0074 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
双极性晶体管
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -140 mA, -250 V, 8 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -400 V, 2.44 ohm, -10 V, -5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
(EN)
VISHAY
二极管 小信号, 单, 100 V, 150 mA, 1.2 V, 4 ns, 350 mA
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 40 V, 300 MHz, 1 W, 200 mA, 100 hFE
(EN)
