规格：工作温度最高值 150°C,
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 45 V, 12.5 W, 1.5 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 200 MHz, 350 mW, -800 mA, 30 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V, 22A, TO-220F
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9.9 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.26 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 4.1A, TSOP
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8.5 A, 700 V, 0.49 ohm, 10 V, 3 V
(EN)
MULTICOMP
二极管 桥式整流, 单相, 1 kV, 35 A, 模块, 1.1 V, 4 引脚
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 160 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2.5 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 191A, DFN5
(EN)
TAIWAN SEMICONDUCTOR
标准恢复二极管, 400 V, 3 A, 单, 1.1 V, 100 A
(EN)
MULTICOMP
快速/超快二极管, 100 V, 1 A, 单, 1 V, 50 ns, 30 A
(EN)
MULTICOMP
标准恢复二极管, 50 V, 1 A, 单, 1.2 V, 200 ns, 30 A
(EN)
TOSHIBA
肖特基整流器, 单, 30 V, 1.5 A, 3-2A1A, 2 引脚, 460 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 100 V, 0.0064 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
桥式整流器
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V
(EN)MULTICOMP
二极管 桥式整流, 单相, 800 V, 15 A, 模块, 1.1 V, 4 引脚
(EN)
MULTICOMP
快速/超快功率二极管, 600 V, 30 A, 单, 1.7 V, 50 ns, 300 A
(EN)
VISHAY
标准恢复二极管, 单, 50 V, 1.5 A, 1.15 V, 2 μs, 50 A
(EN)
