规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.27 ohm, 10 V, 3 V
(EN)
MULTICOMP
快速/超快二极管, 200 V, 1 A, 单, 1 V, 50 ns, 30 A
(EN)
MULTICOMP
齐纳二极管, 1W, 51V, DO-41
(EN)
ON SEMICONDUCTOR
射频双极晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
(EN)
MULTICOMP
二极管 桥式整流, 单相, 1 kV, 40 A, 1.2 V, 4 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0011 ohm, 10 V, 1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 43.3 A, 700 V, 0.072 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 29A, TO-247AC-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -45 V, 100 MHz, 1 W, -1 A, 25 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.085 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 1.5 V, 117 W, 600 V, TO-220, 3 引脚
(EN)
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 1 kV, 2 A, 单, 1.15 V, 50 A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 560 V, 0.85 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 450 V, 4 MHz, 50 W, 2 A, 4 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15.1 A, 650 V, 0.36 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, 100 V, 15 W, 3 A, 50 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 32 V, 250 mW, 100 mA, 330 hFE
(EN)
MULTICOMP
标准功率二极管, 600 V, 1 A, 单, 1.7 V, 35 ns, 30 A
(EN)
DIODES INC.
单晶体管 双极, PNP, 12 V, 110 MHz, 625 mW, -2.5 A, 475 hFE
(EN)
