规格：工作温度最高值 150°C,
DIODES INC.
单管二极管 齐纳, POWERDI?, 16 V, 1 W, SMD, 5 %, 2 引脚, 150 °C
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
VISHAY
二极管 桥式整流, 单相, 600 V, 8 A, SIP, 1 V, 4 引脚
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -8V, SC-88
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -11.4A, -30V, 2.5W
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 900 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.038 ohm, 4.5 V, 670 mV
(EN)
MULTICOMP
单管二极管 齐纳, 200 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
(EN)VISHAY
晶体管, MOSFET, N沟道, 22 A, 500 V, 230 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, -60 V, 65 W, 5 A, 1000 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 145 MHz, 500 mW, -1 A, 63 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 1.75 W, -8 A, 100 hFE
(EN)
VISHAY
双路场效应管, MOSFET, LITTLE FOOT, 双N沟道, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, -600 V, 1.6 W, -500 mA, 120 hFE
(EN)
ON SEMICONDUCTOR
达林顿双极晶体管
(EN)
VISHAY
单管二极管 齐纳, 12 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
MULTICOMP
单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 125 hFE
(EN)
TAIWAN SEMICONDUCTOR
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 35 ns, 100 A
(EN)
VISHAY
标准功率二极管, 单, 600 V, 5 A, 1.15 V, 2.5 μs, 100 A
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 65 W, 6 A, 15 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.245 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.91 ohm, 10 V, 5 V
(EN)
VISHAY
桥式整流器, 单相, 25A, 600V 快接式
(EN)
