
TAIWAN SEMICONDUCTOR
肖特基整流器, 单, 60 V, 3 A, DO-201AD, 2 引脚, 700 mV

BROADCOM LIMITED
晶体管, 射频FET, 硅, 3 V, 500 mA, 500 mW, 450 MHz, 6 GHz, SOT-343

FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4 A, 900 V, 3.5 ohm, 10 V, 5 V

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.13 A, -30 V, 0.155 ohm, -10 V, -3 V

VISHAY
桥式整流器

STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 100 V, 60 W, 8 A, 750 hFE

MULTICOMP
二极管, 超快恢复型, 300mA, 75V, SOD-323-2

WOLFSPEED
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.28 ohm, 15 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 250 V, 40 mohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V

INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V

VISHAY
MOSFET, DUAL P CHANNEL, -20V, -1.3A, SOT-363-6

VISHAY
肖特基整流器, 双共阴极, 60 V, 20 A, TO-247AC, 3 引脚, 490 mV

MULTICOMP
二极管 桥式整流, 单相, 200 V, 1 A, SMD, 1.1 V, 4 引脚

ROHM
单晶体管 双极, NPN, 32 V, 250 MHz, 200 mW, 500 mA, 120 hFE

NEXPERIA
单晶体管 双极, PNP, -250 V, 60 MHz, 1.2 W, -100 mA, 50 hFE

INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V

DIODES INC.
单晶体管 双极, 达林顿, NPN, 60 V, 170 MHz, 1 W, 500 mA, 10000 hFE

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 16 A, 800 V, 600 mohm, 10 V, 5 V

VISHAY
二极管 桥式整流, 三相, 600 V, 25 A, 1.26 V, 5 引脚

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 120 hFE

MICRO COMMERCIAL COMPONENTS
齐纳二极管, 3W, 36V, DO-214AC

NEXPERIA
单管二极管 齐纳, 47 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C