规格：工作温度最高值 150°C,
VISHAY
晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 1 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 325 V, 2.8 MHz, 100 W, 3.5 A, 30 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 140 V, 20 MHz, 100 W, 12 A, 50 hFE
(EN)
TEXAS INSTRUMENTS
N CHANNEL MOSFET, 25V, 60A, SON
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 4A, SOT-23
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 30 V, 4 V
(EN)
MULTICOMP
单管二极管 齐纳, 18 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 2.5 MHz, 90 W, 15 A, 5 hFE
(EN)
VISHAY
桥式整流器
(EN)
MULTICOMP
标准功率二极管, 单, 600 V, 2 A, 1.15 V, 2 μs, 50 A
(EN)
MULTICOMP
二极管 桥式整流, 单相, 600 V, 50 A, GBPC, 1.2 V, 4 引脚
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.03 ohm, 10 V, 3 V
(EN)
VISHAY
肖特基整流器, 单, 45 V, 30 A, TO-220AC, 2 引脚, 700 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.9 V
(EN)
NEXPERIA
晶体管, BISS型, NPN, 50V, 3A, 3-SOT-89
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 800 V, 1 A, 单, 1.7 V, 75 ns, 30 A
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 50 V, 330 MHz, 15 W, 8 A, 200 hFE
(EN)ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -100 V, 3 MHz, 20 W, -6 A, 15 hFE
(EN)
ON SEMICONDUCTOR
齐纳二极管
(EN)INFINEON
晶体管, MOSFET, CoolMOS, N沟道, 52 A, 500 V, 0.06 ohm, 10 V, 3 V
(EN)TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 24 V, 1 W, DO-41 (DO-204AL), 5 %, 2 引脚, 150 °C
(EN)NEXPERIA
小信号肖特基二极管, 双共阴极, 40 V, 120 mA, 1 V, 200 mA, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 100 V, 22 mohm, 10 V, 4 V
(EN)
