规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, N沟道, 600V, 47A, TO-247AD-3
(EN)
NEXPERIA
小信号肖特基二极管, 双共阴极, 40 V, 120 mA, 1 V, 200 mA, 150 °C
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
肖特基整流器, 双共阴极, 100 V, 20 A, TO-220F, 3 引脚, 750 mV
(EN)
ROHM
单晶体管 双极, NPN, 18 V, 1.5 GHz, 150 mW, 20 mA, 56 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 100 MHz, 1.3 W, -1 A, 100 hFE
(EN)
ROHM
二极管 小信号, 双系列, 80 V, 100 mA, 1.2 V, 4 ns, 4 A
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.48 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7 A, 20 V, 0.019 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 6.8 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)
VISHAY
标准功率二极管, 开关, 单, 1 kV, 500 mA, 1.1 V, 1.8 μs, 22 A
(EN)
NEXPERIA
单晶体管 双极, NPN, 50 V, 550 mW, 3 A, 300 hFE
(EN)INFINEON
晶体管, MOSFET, P沟道, -260 mA, -250 V, 7.5 ohm, -10 V, -1.5 V
(EN)
VISHAY
标准恢复二极管, 单, 400 V, 3 A, 1.15 V, 2.5 μs, 100 A
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 通用, 18 V, 500 mW, SOD-523, 2 引脚, 150 °C
(EN)TAIWAN SEMICONDUCTOR
标准功率二极管, 单, 600 V, 500 mA, 1.3 V, 250 ns, 10 A
(EN)
NEXPERIA
单晶体管 双极, NPN, 20 V, 170 MHz, 420 mW, 2 A, 160 hFE
(EN)
TAIWAN SEMICONDUCTOR
标准功率二极管, 双共阴极, 1 kV, 10 A, 880 mV, 125 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 900V, 8A, TO-220
(EN)
