规格：工作温度最高值 150°C,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 44 A, 800 V, 190 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
快速/超快功率二极管, 600 V, 16 A, 双共阴极, 1.5 V, 60 ns, 100 A
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
(EN)
MULTICOMP
快速/超快二极管, 400 V, 3 A, 单, 1.3 V, 50 ns, 150 A
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 700 V, 125 W, 8 A, 5 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 350 V, 100 W, 4 A, 1500 hFE
(EN)
MULTICOMP
标准功率二极管, 1 kV, 3 A, 单, 1.3 V, 500 ns, 150 A
(EN)
VISHAY
肖特基整流器, 单, 30 V, 1 A, SMD, 2 引脚, 500 mV
(EN)STMICROELECTRONICS
肖特基整流器, 双共阴极, 60 V, 5 A, TO-220FP, 3 引脚, 610 mV
(EN)
MULTICOMP
二极管 桥式整流, 单相, 800 V, 25 A, 1.2 V, 4 引脚
(EN)
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 12 V, 200 mW, SOD-323F, 2 引脚, 150 °C
(EN)
NEXPERIA
肖特基整流器, 30 V, 1 A, 单, SOD-123, 2 引脚, 560 mV
(EN)
INFINEON
场效应管阵列, MOSFET, 双P沟道, -30V, -9.2A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.22 ohm, 10 V, 5 V
(EN)
TOSHIBA
单晶体管, IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 24 A, 1.8 V, 104 W, 600 V, TO-247, 3 引脚
(EN)
TAIWAN SEMICONDUCTOR
标准功率二极管, 单, 800 V, 1 A, 470 mV, 30 A
(EN)
SOLID STATE
晶体管, MOSFET, N沟道, 1.1 A, 60 V, 2.7 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 20 V, 5 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3 A, -20 V, 66 mohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24.8 A, 500 V, 0.17 ohm, 13 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE
(EN)
