规格：工作温度最高值 150°C,
VISHAY
二极管 桥式整流, 单相, 1 kV, 25 A, SIP, 1.05 V, 4 引脚
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR
Schottky Rectifier, 200 V, 20 A, Dual Common Cathode, TO-263, 3 Pins, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
ROHM
单晶体管 双极, NPN, 80 V, 300 MHz, 500 mW, 1.5 A, 120 hFE
(EN)
MULTICOMP
二极管 桥式整流, 单相, 400 V, 15 A, 1.2 V, 4 引脚
(EN)
VISHAY
场效应管, N通道, MOSFET, 1KV, 3.1A, TO-247
(EN)
ON SEMICONDUCTOR/FAIRCHILD
射频 JFET
(EN)INFINEON
单晶体管, IGBT, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 引脚
(EN)
DIODES INC.
单管二极管 齐纳, 3.9 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
VISHAY
晶体管, MOSFET, N沟道, 36 A, 500 V, 0.105 ohm, 10 V, 3 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 25 V, 220 MHz, 1 W, 5 A, 250 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.1 A, 40 V, 0.02 ohm, 10 V, 2 V
(EN)MULTICOMP
二极管 桥式整流, 单相, 1 kV, 35 A, 模块, 1.1 V, 4 引脚
(EN)
NXP
晶体管, JFET, JFET, 40 V, 5 mA, 3 V, SOT-23, JFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 32 A, 560 V, 110 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 250 mohm, 30 V, 4 V
(EN)
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 600 V, 3 A, 单, 1.3 V, 250 ns, 150 A
(EN)
VISHAY
整流桥
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 60 W, -8 A, 750 hFE
(EN)
IXYS SEMICONDUCTOR
小信号肖特基二极管, 单, 15 V, 20 A, 390 mV, 160 A, 150 °C
(EN)
MULTICOMP
二极管, 快速恢复型, 2A, 200V, DO-214AC-2
(EN)
