DIODES INC.

单晶体管 双极, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE

ROHM

快速/超快功率二极管, 600 V, 20 A, 单, 1.55 V, 60 ns, 100 A

INFINEON

功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V

VISHAY

肖特基整流器, 2A 60V DO-214AA

TOSHIBA

功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.6 ohm, 10 V, 2.4 V

ROHM

单管二极管 齐纳, 外延平面, 20 V, 200 mW, SOD-323F, 2 引脚, 150 °C

VISHAY

肖特基整流器, 单, 40 V, 1 A, MicroSMP, 2 引脚, 460 mV

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V

VISHAY

齐纳二极管, 19V, 500mW, SOD-123

MULTICOMP

单晶体管 双极, PNP, -80 V, 75 W, 8 A, 20000 hFE

SEMELAB

晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V

VISHAY

齐纳二极管, Vz:82V

NEXPERIA

单管二极管 齐纳, 15 V, 250 mW, TO-236AB, 5 %, 3 引脚, 150 °C

MULTICOMP

桥接整流器, 单相, 35A, 100

ROHM

快速/超快二极管, 400 V, 700 mA, 单, 1.1 V, 2 A

VISHAY

场效应管, MOSFET, N沟道, 20V, 50A, SOIC

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 250 V, 10 MHz, 40 W, 1 A, 10 hFE

VISHAY

晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -10 V, -3 V

DIODES INC.

肖特基整流器, 单, 30 V, 2 A, DO-214AA, 2 引脚, 500 mV

DIODES INC.

单管二极管 齐纳, AEC-Q101, 13 V, 1 W, PowerDI 123, 5 %, 2 引脚, 150 °C

ON SEMICONDUCTOR

单晶体管 双极, PNP, -250 V, 4 MHz, 200 W, -16 A, 8 hFE

IXYS SEMICONDUCTOR

单晶体管, IGBT, 58 A, 2.1 V, 195 W, 1.2 kV, TO-247AD, 3 引脚

NEXPERIA

单晶体管 双极, PNP, -60 V, 145 MHz, 650 mW, -1 A, 100 hFE

ON SEMICONDUCTOR

单晶体管, IGBT, 100 A, 1.45 V, 223 W, 600 V, TO-247, 3 引脚

DIODES INC.

晶体管, MOSFET, P沟道, 3.8 A, -30 V, 75 mohm, 10 V, -1 V