规格：工作温度最高值 150°C,
DIODES INC.
单晶体管 双极, PNP, 20 V, 100 MHz, 600 mW, 2 A, 250 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 40 V, 155 MHz, 2 W, 5 A, 450 hFE
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
(EN)
ROHM
单管二极管 齐纳, 4.7 V, 1 W, SOD-123FL, 2 引脚, 150 °C
(EN)
VISHAY
二极管 桥式整流, 单相, 600 V, 35 A, 模块, 1.14 V, 4 引脚
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 150 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V
(EN)
NEXPERIA
单管二极管 齐纳, 5.6 V, 250 mW, TO-236AB, 5 %, 3 引脚, 150 °C
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0064 ohm, 10 V, 2.7 V
(EN)
ROHM
单管二极管 齐纳, 3.9 V, 150 mW, SOD-523, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 250 V, 94 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -5.7 A, -200 V, 0.54 ohm, -10 V, -5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
桥式整流器
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
NXP
二极管, 肖特基, 1A, 20V, SOD-323F
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -300 V, 15 MHz, 1.5 W, -100 mA, 30 hFE
(EN)
NEXPERIA
单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 125 mohm, -4.5 V, -1 V
(EN)
VISHAY
二极管 桥式整流, 单相, 400 V, 25 A, 模块, 1.1 V, 4 引脚
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 160 A, 2.6 V, 250 W, 600 V, TO-264, 3 引脚
(EN)
VISHAY
桥式整流器
(EN)
