规格：工作温度最高值 150°C,
VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 45 V, 250 MHz, 350 mW, 100 mA, 310 hFE
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 通用, 5.6 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110 hFE
(EN)
VISHAY
场效应管, N通道, MOSFET, 900V, 4.7A TO-247
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 40A
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V
(EN)
ROHM
单管二极管 齐纳, 91 V, 1 W, SOD-123FL, 2 引脚, 150 °C
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 16A, SOIC
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -8 A, -60 V, 0.092 ohm, -10 V, -3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.12 ohm, -10 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 65 W, 8 A, 750 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
齐纳二极管
(EN)
VISHAY
桥式整流器
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.0123 ohm, 10 V, 2.5 V
(EN)
ROHM
标准恢复二极管, 双隔离, 400 V, 500 mA, 1.1 V, 8 A
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 84 A, 650 V, 0.024 ohm, 10 V, 4 V
(EN)
ROHM
单管二极管 齐纳, 外延平面, 5.6 V, 1 W, SOD-123, 2 引脚, 150 °C
(EN)
NEXPERIA
单晶体管 双极, PNP, -20 V, 140 MHz, 650 mW, -2 A, 85 hFE
(EN)
NXP
晶体管 双极-射频, NPN, 4.5 V, 18 GHz, 600 mW, 500 mA, 40 hFE
(EN)
