规格：工作温度最高值 150°C,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 38 A, 600 V, 70 mohm, 10 V, 3.9 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, NPN, 350 V, 90 MHz, 45 W, 4 A, 300 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 110 A, 40 V, 1.7 mohm, 10 V, 1.2 V
(EN)
VISHAY
整流桥
(EN)
MULTICOMP
标准恢复二极管, 单, 100 V, 1 A, 1.2 V, 150 ns, 30 A
(EN)
ON SEMICONDUCTOR
肖特基整流器, 40 V, 3 A, 单, DO-214AB, 2 引脚, 500 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 640 mA, 100 V, 1 ohm, 10 V, 4 V
(EN)
MULTICOMP
单管二极管 齐纳, 33 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
(EN)
MULTICOMP
二极管 桥式整流, 单相, 200 V, 25 A, 模块, 1.1 V, 4 引脚
(EN)
NTE ELECTRONICS
双极性晶体管, NPN, 160V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.055 ohm, -10 V, -2.5 V
(EN)
VISHAY
整流桥
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 75 A, 2.7 V, 463 W, 600 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 100 mA, 1.5 kV, 100 ohm, 10 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 230 V, 30 MHz, 130 W, 8 A, 80 hFE
(EN)
SEMELAB
晶体管, MOSFET, P沟道, -16 A, -200 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 160 hFE
(EN)
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 8.2 V, 120 mW, SOD-723, 2 引脚, 150 °C
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, -100 V, 125 W, -10 A, 500 hFE
(EN)
