规格：工作温度最高值 150°C,
MULTICOMP
单管二极管 齐纳, 62 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单管二极管 齐纳, 5.6 V, 1.5 W, SOT-223, 5 %, 4 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 60 V, 0.018 ohm, 10 V, 2 V
(EN)
TAIWAN SEMICONDUCTOR
二极管 桥式整流, 单相, 600 V, 15 A, 模块, 1.1 V, 4 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.4 V, 160 W, 600 V, TO-220AB, 3 引脚
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 15 A, 500 V, 480 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
快速/超快功率二极管, 单, 600 V, 15 A, 1.8 V, 45 ns, 100 A
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
(EN)
ROHM
小信号肖特基二极管, 通用, 单, 95 V, 1 A, 730 mV, 30 A, 150 °C
(EN)RENESAS
单晶体管, IGBT, 80 A, 1.7 V, 260.4 W, 600 V, TO-247, 3 引脚
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.032 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 45 V, 0.13 ohm, 4.5 V, 1.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V
(EN)MULTICOMP
单管二极管 齐纳, 36 V, 5 W, DO-204AC, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V
NEXPERIA
单管二极管 齐纳, 6.8 V, 250 mW, TO-236AB, 5 %, 3 引脚, 150 °C
(EN)
ROHM
双极晶体管阵列, NPN, 50 V, 300 mW, 150 mA, 120 hFE, SC-74
(EN)
ROHM
单管二极管 齐纳, 外延平面, 4.7 V, 1 W, SOD-123, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, -200 V, 3 MHz, 150 W, -15 A, 400 hFE
(EN)
ROHM
晶体管, MOSFET, N沟道, 300 mA, 30 V, 0.8 ohm, 10 V, 2.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 650 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
三端双向可控硅, 600 V, 1 W, 1 V, 200 A
(EN)
