规格：工作温度最高值 150°C,
VISHAY
快速/超快二极管, 单, 100 V, 3 A, 900 mV, 20 ns, 100 A
(EN)
VISHAY
快速二极管, 1A, 1.3KV, DO-214BA
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.3 ohm, 30 V, 3.75 V
(EN)
NEXPERIA
单管二极管 齐纳, 36 V, 300 mW, SOD-323, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 2.4 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 5 A, -30 V, 100 mohm, 10 V, -1.75 V
(EN)
MULTICOMP
单晶体管 双极, 达林顿, PNP, 80 V, 80 W, 12 A, 1000 hFE
(EN)
MULTICOMP
二极管 桥式整流, 单相, 200 V, 35 A, 1.2 V, 4 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V
(EN)
DIODES INC.
单晶体管 双极, PNP, -300 V, 50 MHz, 200 mW, -100 mA, 40 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0072 ohm, -4.5 V, -1.6 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)
VISHAY
绝缘金属物质功率模块
(EN)
MULTICOMP
单管二极管 齐纳, 14 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
(EN)
ROHM
快速/超快二极管, AEC-Q101, 单, 250 V, 100 mA, 1.2 V, 50 ns, 1 A
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 53 A, 500 V, 80 mohm, 10 V, 3 V
(EN)
VISHAY
桥式整流器, 单相, 6A, 400V 通孔安装
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 隔离, 16 A, 5 V, 120 W, 1.7 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 54 A, 650 V, 0.033 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
肖特基整流器, 35 V, 12.5 A, 双共阴极, TO-220AB, 3 引脚, 550 mV
(EN)
NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 200 MHz, 200 mW, -600 mA, 100 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 2600 μohm, 10 V, 1.2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 4.4 ohm, 10 V, 3.75 V
(EN)
