规格：工作温度最高值 150°C,
NEXPERIA
双极晶体管阵列, 双PNP, -45 V, 200 mW, -100 mA, 200 hFE, SOT-363
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)
ROHM
单管二极管 齐纳, 15 V, 100 mW, SOD-923, 2 引脚, 150 °C
(EN)
TAIWAN SEMICONDUCTOR
二极管 桥式整流, 单相, 600 V, 35 A, 模块, 1.1 V, 4 引脚
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 900 mV
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.027 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 500 V, 0.73 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, IGBT阵列&模块, N沟道, 200 A, 1.92 V, 500 W, 600 V, SOT-227
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 80 V, 50 mohm, 10 V, 3 V
(EN)
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 600 V, 1 A, 单, 1.7 V, 75 ns, 30 A
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 30 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
二极管 桥式整流, 单相, 600 V, 25 A, 模块, 1.1 V, 4 引脚
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 2.3 A, -30 V, 250 mohm, -10 V, -1 V
(EN)
