规格：工作温度最高值 150°C,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 46 A, 650 V, 0.069 ohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 300 V, 24 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 引脚
(EN)
ROHM
单管二极管 齐纳, 外延平面, 10 V, 1 W, SOD-123, 2 引脚, 150 °C
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 64 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)
VISHAY
齐纳二极管, 3.9V, 350mW, SOT-23
(EN)
ROHM
肖特基整流器, 65 V, 30 A, 双共阴极, TO-263, 3 引脚, 690 mV
(EN)
ROHM
肖特基整流器, 40 V, 5 A, 单, SOD-106, 2 引脚, 530 mV
(EN)
DIODES INC.
肖特基整流器, TRENCH, 120 V, 20 A, 双共阴极, TO-220AB, 3 引脚, 790 mV
(EN)DIODES INC.
肖特基整流器, TRENCH, 120 V, 30 A, 双共阴极, TO-220AB, 3 引脚, 930 mV
(EN)DIODES INC.
肖特基整流器, TRENCH, 120 V, 40 A, 双共阴极, TO-220AB, 3 引脚, 880 mV
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 6 A, 2.8 V, 25 W, 1.2 kV, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 450 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
肖特基整流器, 双共阴极, 45 V, 10 A, TO-220FP, 3 引脚, 550 mV
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.065 ohm, 4.5 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
VISHAY
整流桥
(EN)
ROHM
单管二极管 齐纳, 6.2 V, 500 mW, SOD-323HE, 2 引脚, 150 °C
(EN)
MULTICOMP
标准功率二极管, 单, 800 V, 1 A, 980 mV, 30 A
(EN)
IXYS SEMICONDUCTOR
二极管 桥式整流, 三相, 1.6 kV, 20 A, 模块, 1.25 V, 5 引脚
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 49A, PQFN-5
(EN)
