规格：工作温度最高值 150°C,
ROHM
单管二极管 齐纳, 51 V, 1 W, SOD-123FL, 2 引脚, 150 °C
(EN)
ROHM
单管二极管 齐纳, 9.1 V, 1 W, SOD-123FL, 2 引脚, 150 °C
(EN)
ROHM
肖特基整流器, 200 mA, 单, SOD-523, 2 引脚, 450 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.095 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 12V, 21.5A, SOIC-8
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 22 A, 650 V, 0.125 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.075 ohm, 10 V, 4 V
(EN)
VISHAY
齐纳二极管, 8.2V, 350mW, SOT-23
(EN)
ON SEMICONDUCTOR
功率晶体管, NPN, 100V, D2-PAK
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.3 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
二极管 小信号, 单, 100 V, 10 mA, 1 V, 4 ns, 500 mA
(EN)
DIODES INC.
单晶体管 双极, PNP, 40 V, 145 MHz, 2.5 W, 3 A, 450 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 500 mW, 1 A, 63 hFE
(EN)
VISHAY
标准二极管, 3A, 1.3KV, DO-201AD
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.32 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 3 V
(EN)
VISHAY
桥式整流器
(EN)
TAIWAN SEMICONDUCTOR
二极管 桥式整流, 单相, 100 V, 50 A, 模块, 1.1 V, 4 引脚
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V
(EN)
VISHAY
桥式整流器, 单相, 8A, 800V 通孔安装
(EN)
ON SEMICONDUCTOR
双极性晶体管, NPN, 40V
(EN)ROHM
肖特基整流器, 30 V, 2 A, 单, SOD-123FL, 2 引脚, 530 mV
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 900V, 8A, TO-220
(EN)
