规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 1.75 V, 560 W, 1.2 kV, TO-247, 3 引脚
(EN)
NTE ELECTRONICS
双极性晶体管, NPN, 150V, TO-220
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
VISHAY
肖特基整流器, 单, 60 V, 5.5 A, TO-252, 3 引脚, 570 mV
(EN)VISHAY
小信号肖特基二极管, 单, 60 V, 5.5 A, 570 mV, 320 A, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
(EN)
ROHM
单管二极管 齐纳, 外延平面, 10 V, 150 mW, SOD-523, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.6 A, 60 V, 0.0094 ohm, 20 V, 3.2 V
(EN)
MULTICOMP
桥接整流器, 单相, 25A, 400
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 44 A, 500 V, 140 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.024 ohm, 10 V, 5 V
(EN)
VISHAY
二极管 桥式整流, 单相, 100 V, 4 A, SIP, 1.1 V, 4 引脚
(EN)
ROHM
单管二极管 齐纳, 高静电防护, 16.86 V, 1 W, SOD-123, 2 引脚, 150 °C
(EN)
MULTICOMP
小信号肖特基二极管, 单, 45 V, 16 A, 630 mV, 150 A, 150 °C
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 80 V, 125 MHz, 300 mW, 500 mA, 10000 hFE
(EN)
ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.4 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.057 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V
(EN)
DIODES INC.
肖特基整流器, 100 V, 10 A, 双共阴极, TO-220AB, 3 引脚, 660 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 800V, 3A, TO-220
(EN)
ON SEMICONDUCTOR
齐纳二极管, VZ:27V
(EN)
