规格：工作温度最高值 150°C,
ROHM
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.066 ohm, 10 V, 4 V
(EN)
ROHM
肖特基整流器, 30 V, 200 mA, 单, SOD-323FL, 2 引脚, 450 mV
(EN)ROHM
肖特基整流器, 60 V, 3 A, 单, SOD-123FL, 2 引脚, 610 mV
(EN)
VISHAY
快速开关二极管, 1A 800V DO-214AC
(EN)
ROHM
晶体管, MOSFET, N沟道, 6.5 A, 60 V, 0.024 ohm, 10 V, 2.5 V
(EN)
MULTICOMP
快速/超快二极管, 单, 150 V, 6 A, 975 mV, 35 ns, 150 A
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 38.3A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, -60 V, 2 W, 8 A, 20000 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 170 mohm, 10 V, 5.5 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 49A
(EN)
NEXPERIA
单晶体管 双极, PNP, 80 V, 145 MHz, 650 mW, 1 A, 63 hFE
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 21 A, 500 V, 250 mohm, 10 V, 4 V
(EN)
NEXPERIA
双极晶体管阵列, 双PNP, -65 V, 220 mW, -100 mA, 110 hFE, SOT-363
(EN)SEMELAB
单晶体管 双极, PNP, 100 V, 125 W, 16 A, 3000 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, 100 V, 33 W, -12 A, 1000 hFE
(EN)
INFINEON
晶体管, MOSFET, BRT, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V
(EN)IXYS SEMICONDUCTOR
肖特基整流器, 双共阴极, 60 V, 40 A, TO-247AD, 3 引脚, 510 mV
(EN)
