规格：工作温度最高值 150°C,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
整流桥
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 500 V, 340 mohm, 10 V, 3.75 V
(EN)
ROHM
单晶体管 双极, AEC-Q101, PNP, -50 V, 320 MHz, 2 W, -2 A, 180 hFE
(EN)
IXYS SEMICONDUCTOR
标准恢复二极管, 双独立, 400 V, 60 A, 1.8 V, 50 ns, 550 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V
(EN)
MULTICOMP
标准功率二极管, 单, 1 kV, 1 A, 1.3 V, 500 ns, 30 A
(EN)
INFINEON
单晶体管, IGBT, 通用, 16 A, 2.2 V, 70 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.1 A, 200 V, 80 mohm, 10 V, 4.9 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 11 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 引脚
(EN)IXYS SEMICONDUCTOR
Silicon Carbide IGBT Single Transistor, 40 A, 2.5 V, 180 W, 1.2 kV, TO-247AD, 3 Pins
(EN)
ROHM
肖特基整流器, 40 V, 100 mA, 单, SOD-523, 2 引脚, 480 mV
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.065 ohm, 10 V, 3 V
(EN)
ROHM
单管二极管 齐纳, 43 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.7 A, -70 V, 160 mohm, 10 V, -1 V
(EN)MULTICOMP
标准恢复二极管, 单, 200 V, 1 A, 1.1 V, 30 A
(EN)
VISHAY
齐纳二极管, 9.1V, 225mW, SOT-23
(EN)
VISHAY
齐纳二极管, 39V, 500mW, SOD-123
(EN)
MULTICOMP
单管二极管 齐纳, 150 V, 5 W, DO-201AE, 5 %, 2 引脚, 150 °C
(EN)
DIODES INC.
单晶体管 双极, NPN, 20 V, 150 MHz, 600 mW, 100 mA, 330 hFE
(EN)ROHM
单管二极管 齐纳, 5.1 V, 150 mW, SOD-523, 2 引脚, 150 °C
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
