规格：工作温度最高值 150°C,
IXYS SEMICONDUCTOR
二极管 桥式整流, 三相, 1.2 kV, 140 A, 模块, 1.6 V, 5 引脚
(EN)
INFINEON
单晶体管, IGBT, 49 A, 1.85 V, 160 W, 600 V, TO-247AC, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 225 mW, -100 mA, 220 hFE
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
双极性功率晶体管
(EN)
ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 120 hFE
(EN)
NEXPERIA
二极管 小信号, 双共阳极, 90 V, 215 mA, 1.25 V, 4 ns, 4 A
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -130 mA, -50 V, 1.2 ohm, -5 V, -1.7 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0082OHM, 9A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 380 mA, 500 V, 4.6 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 1.2 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 40A
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 14A
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.5 V, 180 W, 1.2 kV, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 350 mW, 200 mA, 30 hFE
(EN)
ON SEMICONDUCTOR
齐纳二极管
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.14 ohm, 10 V, 5 V
(EN)
ROHM
快速/超快功率二极管, 600 V, 20 A, 单, 1.55 V, 60 ns, 100 A
(EN)
ROHM
晶体管, MOSFET, N和P沟道, 6 A, 45 V, 0.018 ohm, 10 V, 2.5 V
(EN)
VISHAY
肖特基整流器, 单, 40 V, 3 A, TO-277A, 3 引脚, 470 mV
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
射频晶体管, PNP, -3V, 25MHZ
(EN)NEXPERIA
二极管 小信号, 单, 100 V, 215 mA, 1.25 V, 4 ns, 4 A
(EN)
