规格：工作温度最高值 150°C,
VISHAY
二极管 桥式整流, 三相, 1.2 kV, 25 A, 模块, 1.26 V, 5 引脚
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
ROHM
双极晶体管阵列, PNP, -50 V, 150 mW, -150 mA, 120 hFE, EMT
(EN)
INFINEON
单晶体管, IGBT, 16 A, 1.66 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 36 A, 500 V, 0.17 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 300 V, 26 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 200 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 1.2 kV, 0.57 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 32 A, 2.7 V, 190 W, 1.7 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.65 V, 223 W, 600 V, TO-247, 3 引脚
(EN)
NTE ELECTRONICS
双极性晶体管, NPN, 400V, TO-220
(EN)
NTE ELECTRONICS
双极性晶体管, PNP, 400V V(BR)CEO, 2A I(C),TO-251VAR
(EN)
NTE ELECTRONICS
桥式整流器, 单相, 50A, 600V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 0.0032OHM, 30.5A, SOIC-8
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 550 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 80 V, 120 MHz, 1.6 W, 5 A, 250 hFE
(EN)
VISHAY
二极管 桥式整流, 单相, 800 V, 35 A, 模块, 1.1 V, 4 引脚
(EN)
INFINEON
单晶体管, IGBT, 17 A, 1.95 V, 45 W, 600 V, TO-220FP, 3 引脚
(EN)
VISHAY
桥式整流器, 单相, 12A, 100V 快接式
(EN)INFINEON
场效应管, MOSFET, N沟道, 30V, 11mA
(EN)
