规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.073 ohm, -4.5 V, -700 mV
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 75 A, 2.5 V, 350 W, 1.7 kV, TO-247AD, 3 引脚
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 100 A, 250 V, 27 mohm, 10 V, 5 V
(EN)
ROHM
单管二极管 齐纳, 高静电防护, 12.5 V, 1 W, SOD-123, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 9.1 V, 200 mW, SOD-323F, 2 %, 2 引脚, 150 °C
(EN)
NTE ELECTRONICS
达林顿双极性晶体管
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
VISHAY
桥式整流器, 3相, 160A, 1.6KV
(EN)
VISHAY
齐纳二极管, 36V, 500mW, SOD-123
(EN)
VISHAY
齐纳二极管, 4.3V, 300mW, SOT-23
(EN)
MULTICOMP
单晶体管 双极, PNP, -60 V, 125 MHz, 500 mW, -1 A, 250 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 100 A, 1.45 V, 275 W, 600 V, Module
(EN)DIODES INC.
单晶体管 双极, NPN, 15 V, 150 MHz, 2 W, 4 A, 500 hFE
(EN)
VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK
(EN)
NEXPERIA
单晶体管 双极, NPN, 50 V, 250 MHz, 250 mW, 200 mA, 210 hFE
(EN)
NEXPERIA
二极管 小信号, 双共阴极, 60 V, 125 mA, 1 V, 4 ns, 4 A
(EN)
MICRO COMMERCIAL COMPONENTS
双极性晶体管, NPN, 45V, SOT-23
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 引脚
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 3 ohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 120 A, 2 V, 298 W, 600 V, TO-247, 3 引脚
(EN)
NTE ELECTRONICS
二极管, 桥式整流器, 单相, 50A, 200V
(EN)
