规格：工作温度最高值 150°C,
ROHM
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.02 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, 开关, NPN, 40 V, 250 mW, 800 mA, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 4.3 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 450 V, 85 W, 5 A, 38 hFE
(EN)
ROHM
单管二极管 齐纳, 12 V, 150 mW, SOD-523, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.014 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40A, 30V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V
(EN)
INFINEON
单晶体管, IGBT, 20 A, 3.1 V, 100 W, 1.2 kV, TO-247AC, 3 引脚
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 100 A, 500 V, 0.049 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 900 V, 900 mohm, 10 V, 3.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 300 V, 0.019 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q-Class, N沟道, 27 A, 800 V, 0.32 ohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 23 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
(EN)MULTICOMP
肖特基整流器, 双共阴极, 45 V, 30 A, TO-220AB, 3 引脚, 820 mV
(EN)
IXYS SEMICONDUCTOR
晶闸管, 1200 V, 100 mA, 99 A, 156 A, SOT-227B, 4 引脚
(EN)
VISHAY
齐纳二极管, 7.5V, 350mW, SOT-23
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 30 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 920 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 32.4 A, 650 V, 0.09 ohm, 10 V, 4 V
(EN)
