规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 200 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 180 MHz, 640 mW, 1 A, 63 hFE
(EN)NEXPERIA
单管二极管 齐纳, 8.2 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)ON SEMICONDUCTOR
单管二极管 齐纳, 6.8 V, 225 mW, SOT-23, 6 %, 3 引脚, 150 °C
(EN)
POWEREX
模块, 晶体管, IGBT, 1.2KV, 150A
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.5 mohm, 8 V, 1.1 V
(EN)
INFINEON
单晶体管, IGBT, 60 A, 1.68 V, 160 W, 600 V, TO-220AB, 3 引脚
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 3.3 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
NTE ELECTRONICS
双极性晶体管
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 125 V, 20 A, 389 W, 230 MHz, M174
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 200 A, 3.3 V, 1.2 kV, Module
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
(EN)
VISHAY
整流桥
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
二极管 小信号, 单对串联, 70 V, 150 mA, 1.25 V, 3 μs, 500 mA
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 800 V, 400 mohm, 10 V, 5 V
(EN)
MULTICOMP
快速/超快二极管, 单, 400 V, 2 A, 1.3 V, 35 ns, 50 A
(EN)
ROHM
单晶体管 双极, 高速, NPN, 60 V, 300 MHz, 200 mW, 500 mA, 120 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 0.4 ohm, 5 V, 2 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 44 A, 800 V, 190 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 98 A, 500 V, 0.05 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 48 A, 650 V, 0.065 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 40 A, 500 V, 170 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 单, 40 V, 5 A, DO-214AB, 2 引脚, 500 mV
(EN)
