规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
小信号二极管
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 20 V, 350 MHz, 255 mW, 1 A, 100 hFE
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 60 V, 0.7 ohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 40V, 50A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 120V, 0.0096OHM, 35A, POWER 56-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.152 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.205 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 60 V, 2.27 W, 1 A, 35 hFE, WDFN
(EN)
MULTICOMP
肖特基整流器, 20 V, 3 A, 单, DO-214AB, 2 引脚, 550 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.026 ohm, 4.5 V, 400 mV
(EN)
NEXPERIA
二极管 小信号, 双共阳极, 225 mA, 1.25 V, 50 ns, 9 A
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 0.204 ohm, 10 V, 3.5 V
(EN)
VISHAY
晶体管, P沟道
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管, 齐纳, 200MW, 6.2V, SOT-23
(EN)
NEXPERIA
双路场效应管, MOSFET, AEC-Q101, 双PNP
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 25V, 60A, PQFN-30
(EN)
MULTICOMP
齐纳二极管, 4.7V, 200mW, SOD-323
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
(EN)
NXP
晶体管, BISS, NPN, 60V, 3A, 6-SOT-457
(EN)
