规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.00095 ohm, 10 V, 1.6 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
NEXPERIA
双极性晶体管阵列, 双路NPN, 45V, 500mA, 6-SOT-457
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100A, 60V, 3.6W
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 25 V, 650 MHz, 300 mW, 60 hFE
(EN)
NEXPERIA
二极管阵列 齐纳, 68 V, 300 mW, -55 °C, 150 °C, SOT-23
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -40A, POWERPAK SO-8
(EN)
INFINEON
晶体管 双极-射频, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, 150 hFE
(EN)
VISHAY
肖特基整流二极管阵列, 双路 共阴极, 30A, TO-263AB
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 9.6 A, 30 V, 0.014 ohm, 4.5 V, 1.2 V
(EN)
VISHAY
快速二极管, 2A, 100V, DO-204AC
(EN)
VISHAY
MOSFET, P CHANNEL, -8V, -12A, POWERPAK SC70-6
(EN)
NEXPERIA
单晶体管 双极, NPN, PNP, 30 V, 165 MHz, 2 W, 1 A, 180 hFE
(EN)
VISHAY
齐纳二极管, 13V, 350mW, SOT223
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -8 V, 42 mohm, -4.5 V, -1 V
(EN)
VISHAY
单管二极管 齐纳, 18 V, 2.3 W, DO-219AB, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 6.8A, MICROFET 2X2
(EN)INFINEON
晶体管 双极-射频, NPN, 4.2 V, 47 GHz, 160 mW, 45 mA, 160 hFE
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 35 V, 0.03 ohm, 10 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -3.05 A, -30 V, 0.063 ohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
二极管 小信号, 单, 80 V, 100 mA, 1.2 V, 3 ns, 500 mA
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 20 W, 8 A, 300 hFE
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 3.2A, TO-236
(EN)
