规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, N沟道, 75V, 16A POWERPAK
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV
(EN)
ON SEMICONDUCTOR
达林顿晶体管, PNP, -60V, TO-225
(EN)
VISHAY
MOSFET, N CHANNEL, 200V, 960mA, SOT-223-4
(EN)
STMICROELECTRONICS
肖特基整流器, 双共阴极, 60 V, 15 A, TO-247, 3 引脚, 650 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -50 V, 200 MHz, 250 mW, -200 mA, 210 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0029OHM, 42A, POWER 56-8
(EN)
INTERNATIONAL RECTIFIER
场效应管, 双MOSFET, 双P沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.0015 ohm, 10 V, 2.3 V
(EN)
VISHAY
齐纳二极管, 16V, 500mW, SOD-123
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 14.8 A, 30 V, 0.0043 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.0092 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16.4 A, 30 V, 0.0046 mohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 104 A, 100 V, 0.0065 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 2W, 6-TSOP
(EN)
VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-220AB-3
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 30A, PQFN-8
(EN)
