规格：工作温度最高值 150°C,
VISHAY
N CHANNEL MOSFET, 30V, 60A, SOIC
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 1.8 ohm, 10 V, 3 V
(EN)
MICRO COMMERCIAL COMPONENTS
双极性晶体管, NPN, 30VDC, SOT-23
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -20V, 7.4A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0063 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 300mA, SC-70
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 7.8A, WDFN6
(EN)
VISHAY
晶体管, MOSFET, N沟道, 58 A, 40 V, 0.0062 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, 双路N沟道, 30V, 40A, POWERPAIR-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.1 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 7.7 A, -30 V, 0.025 ohm, -10 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -30 V, 80 MHz, 2.1 W, -6 A, 345 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, 100V
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, 14A, SOIC
(EN)ON SEMICONDUCTOR
MOSFET, N CHANNEL, 30V, 0.0056OHM, 44A, SOIC-8
(EN)
MULTICOMP
快速/超快二极管, 100 V, 3 A, 单, 950 mV, 35 ns, 125 A
(EN)
NEXPERIA
单晶体管 双极, PNP, -30 V, 104 MHz, 480 mW, -2.7 A, 350 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 5 MHz, 1.8 W, -15 A, 5 hFE
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 20V, 211A, DIRECTFET
(EN)
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 13 V, 200 mW, SOD-323F, 2 引脚, 150 °C
(EN)
