规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, N沟道, 30V, 6.3A, TSOP6
(EN)
MULTICOMP
齐纳二极管, 5.6V, 350mW, SOT-23
(EN)
ROHM
单管二极管 齐纳, 5.1 V, 1 W, SOD-106, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
达林顿晶体管, PNP, -80V, TO-225
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0038OHM, 18A, SOIC-8
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
肖特基整流器, 单, 45 V, 7.5 A, TO-220AC, 2 引脚, 840 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 60A, 0.0051OHM, SON-8
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 7.3 A, 12 V, 0.015 ohm, 4.5 V, 600 mV
(EN)
NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -45 V, 100 MHz, 280 mW, -100 mA, 420 hFE
(EN)VISHAY
MOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 12A, TO-220F
(EN)
NEXPERIA
单晶体管 双极, NPN, 15 V, 500 MHz, 200 mW, 200 mA, 20 hFE
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -8.2A, TSSOP-8
(EN)VISHAY
场效应管, MOSFET, N沟道, 600V, 15A, TO-220F
(EN)
ON SEMICONDUCTOR
射频双极晶体管
(EN)
MULTICOMP
二极管, 标准恢复, 2A, 1KV, DO-214AC-2
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.2 A, 600 V, 4 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.133 ohm, 10 V, 5 V
(EN)VISHAY
RECTIFIER, STD, SINGLE, 1.5A, 1.6KV, DO-214AC-2
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 55 A, 30 V, 0.0014 ohm, 10 V, 1.7 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 15A, TO-263-3
(EN)VISHAY
MOSFET, N CHANNEL, 600V, 12A, TO-220AB-3
(EN)
