规格：工作温度最高值 150°C,
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO-220FP-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO-263-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
ROHM
单管二极管 齐纳, 外延平面, 12 V, 200 mW, SOD-323F, 2 引脚, 150 °C
(EN)
NEXPERIA
单晶体管 双极, AEC-Q101, NPN, 45 V, 100 MHz, 280 mW, 100 mA, 420 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, JFET, N沟道, -35V, SOT-23
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道 + 肖特基, 16 A, 30 V, 0.0075 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR
射频双极晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V 22A TO-220
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管阵列, PNP, 四路, -60V SOIC
(EN)
MULTICOMP
二极管, 超快恢复型, 200mA, 30V, SOT-523-3
(EN)
NEXPERIA
单晶体管 双极, PNP, -20 V, 80 MHz, 1.1 W, -4 A, 400 hFE
(EN)
TAIWAN SEMICONDUCTOR
快速/超快二极管, 500 V, 1 A, 单, 1.7 V, 35 ns, 30 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 500V, 0.65OHM, 9A, TO-263-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 240 A, 80 V, 0.0016 ohm, 10 V, 2.9 V
(EN)
ON SEMICONDUCTOR
齐纳二极管
(EN)
NEXPERIA
齐纳二极管, 3.3V, 1W, SOT-89-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 124 A, 40 V, 0.0028 ohm, 10 V, 1.8 V
(EN)STMICROELECTRONICS
肖特基整流器, 单, 40 V, 1 A, DO-214AC, 2 引脚, 500 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 12A, TO-220-3
(EN)
NEXPERIA
二极管阵列 齐纳, 11 V, 双共阳极, 425 mW, -65 °C, 150 °C, SOT-663
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC
(EN)
ON SEMICONDUCTOR
RF TRANSISTOR, NPN, 30V, 100MHZ, SOT-323
(EN)
