规格：工作温度最高值 150°C,
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 32 A, 1 kV, 0.32 ohm, 10 V, 6.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 5 V
(EN)
ROHM
二极管阵列 齐纳, Bidirectional, 36 V, 200 mW, -55 °C, 150 °C, SOT-323
(EN)
ROHM
二极管阵列 齐纳, 5.6 V, 双共阳极, 200 mW, -55 °C, 150 °C, SOT-346
(EN)
VISHAY
肖特基整流二极管, 2A, 30V, SMB
(EN)ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 650 mW, 1 A, 100 hFE
(EN)
MULTICOMP
快速/超快功率二极管, 单, 600 V, 1 A, 1.7 V, 75 ns, 30 A
(EN)
MICROCHIP
MOSFET, N CHANNEL, 450V, 0.1A, TO-243AA-3
(EN)ROHM
单管二极管 齐纳, 27 V, 500 mW, SOD-323HE, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.2 A, 600 V, 0.33 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 600V, 16A, TO-247
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.092 ohm, 10 V, 4 V
(EN)MULTICOMP
肖特基整流器, 双共阴极, 100 V, 30 A, TO-220AB, 3 引脚, 940 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
(EN)
MULTICOMP
单管二极管 齐纳, 27 V, 1 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.55 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
(EN)
