规格：工作温度最高值 150°C,
MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0028 ohm, 10 V, 1.3 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 48 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)
NXP
稳压器二极管
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 110 A, 600 V, 0.056 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)
ROHM
单晶体管 双极, PNP, 32 V, 100 MHz, 1 W, 2 A, 82 hFE
(EN)
TAIWAN SEMICONDUCTOR
二极管 桥式整流, 单相, 100 V, 35 A, 模块, 1.1 V, 4 引脚
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-247AC-3
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 525 V, 2.1 ohm, 10 V, 3.75 V
(EN)
ROHM
单管二极管 齐纳, 4.3 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
桥式整流器, 100V, 12.5A
(EN)
MULTICOMP
单管二极管 齐纳, 24 V, 1 W, DO-41, 5 %, 2 引脚, 150 °C
(EN)
INFINEON
场效应管, MOSFET, N沟道, HEXFET, 30V, 8.2A, TSOP-6
(EN)
NTE ELECTRONICS
晶体管, BJT, NPN, 140V V(BR)CEO, 16A I(C), TO-3
(EN)
BROADCOM LIMITED
(EN)WEEN SEMICONDUCTOR
三端双向可控硅, 600 V, 5 W, 1.5 V, TO-220AB, 190 A
(EN)TAIWAN SEMICONDUCTOR
二极管 桥式整流, 单相, 200 V, 50 A, 模块, 1.2 V, 4 引脚
(EN)
VISHAY
二极管 桥式整流, 单相, 200 V, 6 A, SIP, 1 V, 4 引脚
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, IGBT, 1.95V, 60A, TO-247AD-3
