规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 3.3 V, 500 mW, SOD-123, 2 引脚, 150 °C
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 40A
(EN)
TAIWAN SEMICONDUCTOR
标准功率二极管, 800 V, 3 A, 单, 1.15 V, 1.5 μs, 100 A
(EN)ROHM
单管二极管 齐纳, 7.5 V, 150 mW, SOD-523, 2 引脚, 150 °C
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 70 W, 12 A, 750 hFE
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 4.4A, CHIPFET-8
(EN)
MULTICOMP
标准功率二极管, 单, 800 V, 1 A, 1.3 V, 500 ns, 30 A
(EN)ON SEMICONDUCTOR
肖特基整流器, 双共阴极, 120 V, 30 A, TO-263, 3 引脚, 1.08 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 14A, TO-204AA
(EN)
NEXPERIA
单晶体管 双极, PNP, -20 V, 130 MHz, 700 mW, -5.5 A, 370 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0013 ohm, 4.5 V, 1.5 V
(EN)
ROHM
双极晶体管阵列, NPN, 50 V, 150 mW, 150 mA, 120 hFE, EMT
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.5 ohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
单晶体管 双极, PNP, 80 V, 50 MHz, 12.5 W, 3 A, 50 hFE
(EN)ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.22 ohm, 10 V, 5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 28 A, 600 V, 0.26 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -100 V, 3 MHz, 15 W, -3 A, 10 hFE
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 6.2 V, 225 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
VISHAY
晶体管, 场效应管, MOSFET, P沟道, -12V, -10.2A, 微型FOOT-4
(EN)
DIODES INC.
单晶体管 双极, POWERDI?5, NPN, 100 V, 130 MHz, 3.2 W, 6 A, 230 hFE
(EN)
VISHAY
标准功率二极管, 单, 1.2 kV, 8 A, 3.3 V, 95 ns, 130 A
(EN)
IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, 双N沟道, 30 A, 1.9 V, 100 W, 600 V, i4-PAC
(EN)
