规格：工作温度最高值 150°C,
IXYS SEMICONDUCTOR
晶体管, MOSFET, Q3-Class, N沟道, 80 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 164 A, 2.75 V, 1.04 kW, 1.2 kV, TO-264AA, 3 引脚
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.231 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.225 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 37 A, 1.55 V, 115 W, 600 V, Module
(EN)
GENESIC SEMICONDUCTOR
单晶体管, IGBT, 硅, 35 A, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 42 A, 600 V, 0.185 ohm, 10 V, 4.5 V
(EN)
ROHM
单管二极管 齐纳, 高静电防护, 28.7 V, 1 W, SOD-123, 2 引脚, 150 °C
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, IGBT阵列&模块, N沟道, 45 A, 1.55 V, 150 W, 600 V, Module
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V
(EN)
MICRO COMMERCIAL COMPONENTS
双极性晶体管, NPN, 40VDC, SOT-323
(EN)
NTE ELECTRONICS
桥式整流器, 单相, 6A, 600V, SIP-4
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 43 A, 2.1 V, 150 W, 1.2 kV, TO-247AD, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0014 ohm, 10 V, 1 V
(EN)
MULTICOMP
二极管 桥式整流, 单相, 600 V, 1 A, SOIC, 1.1 V, 4 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.028 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO-263-3
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.6 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, 双NPN, 485 A, 1.55 V, 1.25 kW, 650 V, Module
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.46 ohm, 10 V, 3 V
(EN)
MULTICOMP
快速/超快二极管, 高效玻璃钝化, 单, 100 V, 1 A, 1 V, 50 ns, 30 A
(EN)
VISHAY
场效应管, MOSFET, P沟道, -8V, 4.1A, TO-236
(EN)
