规格：工作温度最高值 150°C,
NEXPERIA
单管二极管 齐纳, 16 V, 250 mW, SOT-23, 1 %, 3 引脚, 150 °C
(EN)
NEXPERIA
单管二极管 齐纳, 3.3 V, 250 mW, SOT-23, 1 %, 3 引脚, 150 °C
(EN)NEXPERIA
单管二极管 齐纳, 2.4 V, 250 mW, SOT-23, 2 %, 3 引脚, 150 °C
(EN)NEXPERIA
单管二极管 齐纳, 250 mW, TO-236AB, 2 %, 3 引脚, 150 °C
(EN)NEXPERIA
单管二极管 齐纳, 22 V, 250 mW, TO-236AB, 5 %, 3 引脚, 150 °C
(EN)
VISHAY
齐纳二极管, 18V, 300MW, SOT-23-3, 整卷
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 30 V, 225 mW, SOT-23, 7 %, 3 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, POWERTRENCH系列, P沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 2.6 ohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 4.5A, SOIC, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 28 mohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双P沟道, -30V 6A SOIC, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, IGBT阵列&模块, 双NPN, 440 A, 1.95 V, 1.8 kW, 1.7 kV, Module
(EN)
INFINEON
晶体管, IGBT阵列&模块, N沟道, 1.5 kA, 2.55 V, 17 kW, 3.3 kV, Module
(EN)
INFINEON
场效应管, MOSFET, N沟道, 150V, 900MA, TSOP, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 0.03 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, 双路, N通道, 场效应管, MOSFET, 20V, 微型8, 整卷
(EN)INFINEON
场效应管, P通道, MOSFET, -30V, -16A, SOIC, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 5.3A, SOT-23, 整卷
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23, 整卷
(EN)
INFINEON
场效应管, N通道, MOSFET, 20V, 6.5A, MICRO-6, 整卷
(EN)
