规格：工作温度最高值 150°C,
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 1.5W, 6.2V, DO-214AC, 整卷
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.015 ohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 250 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
肖特基整流二极管, 500MA, 40V, SOD-123, 整卷
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, -185mA, SOT-23, 整卷
(EN)
VISHAY
晶体管, IGBT阵列&模块, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, EconoPACK
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 60V, 300MA, 3-SOT-23, 整卷
(EN)
VISHAY
单管二极管 齐纳, 5.1 V, 500 mW, SOD-123, 2 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
齐纳二极管
(EN)
INFINEON
N CH POWER MOSFET, HEXFET, 30V, 27A, PQF
(EN)
NXP
场效应管阵列, MOSFET, N与P沟道, 30V, 3.5A, 8-SOIC
(EN)
VISHAY
二极管, 齐纳, 6.8V, 0.3W, SOT-23-3
(EN)
MICRO COMMERCIAL COMPONENTS
双极性晶体管, NPN, 30VDC, SOT-23
(EN)
VISHAY
晶体管, 双N&P沟道
(EN)
ON SEMICONDUCTOR
肖特基二极管, 30A 100V TO-220AB
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-3P-3
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 1.2KV, 45A
VISHAY
快速开关二极管, 3A 800V DO-214AB
(EN)NXP
开关晶体管, PNP, -40V, -600MA
(EN)
ON SEMICONDUCTOR
齐纳二极管
(EN)
NEXPERIA
二极管 小信号, 单, 100 V, 250 mA, 1.25 V, 4 ns, 4 A
(EN)
