规格：工作温度最高值 150°C,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.026Ω, 2.7A, SUPERSOT-3
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -80 V, 50 MHz, 150 mW, -500 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, AEC-Q101, 30 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 250 mA, 30 V, 1 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.37 A, -20 V, 120 mohm, -4.5 V, -640 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
DIODES INC.
肖特基整流器, POWERDI?, 单, 60 V, 1 A, SMD, 2 引脚, 640 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)
VISHAY
肖特基整流器, 单, 60 V, 3 A, SMD, 2 引脚, 780 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)
NXP
射频晶体管, PNP
(EN)
NEXPERIA
单管二极管 齐纳, 9.1 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -19.7A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 500 mA, 25 V, 0.34 ohm, 4.5 V, 800 mV
(EN)
VISHAY
二极管 桥式整流, 单相, 1 kV, 1.5 A, 通孔安装, 1 V, 4 引脚
(EN)
TAIWAN SEMICONDUCTOR
肖特基整流器, 高频率/转换率, 单, 100 V, 1 A, SMD, 2 引脚, 900 mV
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 630 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 240 V, 2.2 ohm, 10 V, 1.65 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)NEXPERIA
单晶体管 双极, NPN, 40 V, 300 MHz, 240 mW, 200 mA, 100 hFE
(EN)
VISHAY
场效应管, MOSFET, N沟道, D-S, 20V, 7.9A, TSOP6
(EN)ON SEMICONDUCTOR
单管二极管 齐纳, 4.7 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
VISHAY
单管二极管 齐纳, 24 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)
