规格：工作温度最高值 150°C,
ON SEMICONDUCTOR
单管二极管 齐纳, 18 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR
单管二极管 齐纳, 6.8 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
MULTICOMP
二极管 桥式整流, WOBM系列, 单相, 800 V, 1.5 A, 通孔安装, 1.1 V, 4 引脚
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.19 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 140 mA, 20 V, 5 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.19 ohm, -10 V, -2.6 V
(EN)
VISHAY
肖特基整流器, 单, 30 V, 3 A, DO-220AA, 2 引脚, 580 mV
(EN)
NEXPERIA
肖特基整流器, 单, 30 V, 500 mA, SOD-523, 2 引脚, 500 mV
(EN)
NEXPERIA
单管二极管 齐纳, 27 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)
VISHAY
单管二极管 齐纳, 27 V, 3 W, DO-214AC, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -60 V, 72 mohm, -10 V, -3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 22 A, 12 V, 0.0075 ohm, 4.5 V, 800 mV
(EN)
NEXPERIA
单晶体管 双极, 双PNP, -65 V, 100 MHz, 200 mW, -100 mA, 200 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 525 V, 0.41 ohm, 10 V, 3.75 V
(EN)NEXPERIA
单管二极管 齐纳, 3.6 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单管二极管 齐纳, 18 V, 400 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 100 V, 140 MHz, 625 mW, 900 mA, 60000 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)
TAIWAN SEMICONDUCTOR
肖特基整流器, 50 V, 3 A, 单, DO-214AB, 2 引脚, 750 mV
(EN)TAIWAN SEMICONDUCTOR
快速/超快二极管, 300 V, 3 A, 单, 1.3 V, 35 ns, 100 A
(EN)VISHAY
肖特基整流器, 单, 60 V, 2 A, SMD, 2 引脚, 700 mV
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 175 MHz, 390 mW, 3.8 A, 500 hFE
(EN)
