规格：工作温度最高值 150°C,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0029 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 71 A, 30 V, 4.8 mohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0034 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0035 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 2 A, 42 V, 0.165 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 40 V, 1.5 A, 单, DSN, 2 引脚, 590 mV
(EN)
STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 60 V, 150 MHz, 15 W, 3 A, 200 hFE
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 6.9 A, 60 V, 45 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 700 V, 4 A, TO-252, 35 mA, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.5 ohm, -10 V, -2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 900 mW, 500 mA, 160 hFE
(EN)
NEXPERIA
二极管 小信号, 单, 250 V, 250 mA, 1.25 V, 50 ns, 9 A
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.8 V
(EN)NEXPERIA
单晶体管 双极, PNP, 80 V, 145 MHz, 650 mW, 1 A, 100 hFE
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 通用, 3.9 V, 3 W, DO-214AA, 5 %, 2 引脚, 150 °C
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -18 A, -40 V, 0.021 ohm, -10 V, -3 V
(EN)
DIODES INC.
单管二极管 齐纳, 12 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
(EN)
VISHAY
快速/超快二极管, 单, 400 V, 3 A, 1.1 V, 35 ns, 100 A
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 0.038 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 单, 45 V, 15 A, DFN, 5 引脚, 570 mV
(EN)VISHAY
标准恢复二极管, 单, 200 V, 1.5 A, 1.15 V, 2 μs, 50 A
(EN)
