规格：工作温度最高值 150°C,
VISHAY
肖特基整流器, 单, 30 V, 2 A, MicroSMP, 2 引脚, 600 mV
(EN)
VISHAY
桥式整流器, 单相, 1A, 1KV, SMD
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 3 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 3 V
(EN)
NEXPERIA
双极晶体管阵列, PNP, -45 V, 300 mW, -100 mA, 290 hFE, SOT-666
(EN)
VISHAY
快速/超快二极管, 200 V, 16 A, 单, 975 mV, 35 ns, 250 A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
标准功率二极管, 单, 1.5 kV, 10 A, 1.6 V, 170 ns, 100 A
(EN)
TAIWAN SEMICONDUCTOR
标准恢复二极管, 100 V, 1 A, 单, 1.3 V, 150 ns, 30 A
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0025 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 1 W, 200 mA, 300 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 通用, NPN, 300 V, 50 MHz, 1 W, 200 mA, 40 hFE
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-263-3
(EN)
VISHAY
肖特基整流器, 双共阴极, 50 V, 30 A, TO-263AC, 3 引脚, 570 mV
(EN)VISHAY
肖特基整流器, 双共阴极, 100 V, 40 A, TO-263AC, 3 引脚, 750 mV
(EN)
VISHAY
肖特基整流器, 100 V, 5.5 A, 单, TO-252AA, 3 引脚, 770 mV
(EN)
VISHAY
二极管, 快速, 3A, 1KV, DO-201AD-2
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.06 ohm, 10 V, 5.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6.5 A, 30 V, 0.039 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.2 A, 30 V, 0.03 ohm, 10 V, 1.6 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -9.2 A, -30 V, 0.013 ohm, -10 V, -1.8 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 210 MHz, 500 mW, 3 A, 465 hFE
(EN)
