规格：工作温度最高值 150°C,
NEXPERIA
单管二极管 齐纳, 30 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单管二极管 齐纳, 3.9 V, 300 mW, SOD-523, 5 %, 2 引脚, 150 °C
(EN)
NEXPERIA
单管二极管 齐纳, 33 V, 250 mW, SOT-23, 1 %, 3 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 60 V, 0.092 ohm, 10 V
(EN)
DIODES INC.
标准功率二极管, 单, 600 V, 1 A, 1.1 V, 25 A
(EN)DIODES INC.
单管二极管 齐纳, POWERDI?, 15 V, 1 W, SMD, 5 %, 2 引脚, 150 °C
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 11.7 A, 20 V, 0.0065 ohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.6 A, 20 V, 0.027 ohm, 10 V, 600 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 300 mA, 50 V, 2 ohm, 5 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.02 ohm, -4.5 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0043 ohm, -10 V, -3 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -40 V, 0.026 ohm, -10 V, -2.2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 30 A, 40 V, 0.0092 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 211 A, 30 V, 0.0008 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 218 A, 30 V, 0.0009 ohm, 10 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 151 A, 100 V, 0.0024 ohm, 10 V, 3.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 51 A, 100 V, 0.0099 ohm, 10 V, 3.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 75 MHz, 500 mW, -2 A, 40 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 0.75 ohm, 10 V, 1.7 V
(EN)
MULTICOMP
齐纳二极管, 3.3V, 350mW, SOT-23
(EN)
