规格：工作温度最高值 150°C,
MULTICOMP
齐纳二极管, 7.5V, 500mW, SOD-123
(EN)
DIODES INC.
单管二极管 齐纳, MMSZ52系列, 24 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道+肖特基, 3.7 A, 30 V, 0.047 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 0.072 ohm, -10 V, -3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 5.3 A, 20 V, 0.032 ohm, 4.5 V, 650 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00093 ohm, 10 V, 1.7 V
VISHAY
标准恢复二极管, 单, 100 V, 1.5 A, 1.3 V, 150 ns, 50 A
(EN)
VISHAY
整流器, 4A, 600V, SMPC
(EN)VISHAY
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.027 ohm, 4.5 V, 400 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -5.9A, SOT-23-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 0.037 ohm, -10 V, -1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -6 A, -30 V, 0.045 ohm, -10 V, -1.2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, -8.6A, POWERPAK SO-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -12 V, 0.011 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -8 V, 0.028 ohm, -4.5 V, -350 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.00145 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.00145 ohm, 10 V, 2.5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 40V, 50A, POWERPAK SO-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 35.4 A, 200 V, 0.0239 ohm, 10 V, 4 V
(EN)
