
VISHAY
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0073 ohm, 10 V, 2.2 V

VISHAY
晶体管, MOSFET, P沟道, -50 A, -20 V, 0.0035 ohm, -4.5 V, 900 mV

VISHAY
肖特基整流器, 双共阴极, 40 V, 10 A, TO-277A, 3 引脚, 530 mV

VISHAY
肖特基整流器, 单, 50 V, 2 A, SMD, 2 引脚, 700 mV

VISHAY
二极管, 肖特基, 3A, 30V, DO-220AA-2

ON SEMICONDUCTOR
单管二极管 齐纳, 18 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C

ON SEMICONDUCTOR
单管二极管 齐纳, 16 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

ON SEMICONDUCTOR
单管二极管 齐纳, 5.1 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

NEXPERIA
单管二极管 齐纳, 7.5 V, 500 mW, SOD-323F, 2 %, 2 引脚, 150 °C

VISHAY
二极管, 肖特基, 8A, 100V, TO-277A-3

ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V

ROHM
单管二极管 齐纳, 18 V, 500 mW, SOD-323HE, 2 引脚, 150 °C

DIODES INC.
晶体管, MOSFET, P沟道, 4 A, -30 V, 70 mohm, 10 V, -800 mV

DIODES INC.
单管二极管 齐纳, 6.8 V, 200 mW, SOD-323, 6 %, 2 引脚, 150 °C

DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 40 V, 200 mW, 600 mA, 100 hFE, SOT-363

TAIWAN SEMICONDUCTOR
肖特基整流器, 150 V, 1 A, 单, DO-214AC, 2 引脚, 950 mV

NEXPERIA
单管二极管 齐纳, 6.2 V, 300 mW, SOD-323, 2 %, 2 引脚, 150 °C

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V

DIODES INC.
单管二极管 齐纳, 精准, 3.3 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 201 A, 30 V, 0.00077 ohm, 10 V, 1.5 V

STMICROELECTRONICS
肖特基整流器, 单, 45 V, 30 A, SMD, 8 引脚, 640 mV

DIODES INC.
标准功率二极管, 单, 1 kV, 3 A, 1.3 V, 500 ns, 100 A

NEXPERIA
单晶体管 双极, PNP, -150 V, 115 MHz, 300 mW, -1 A, 220 hFE