规格：工作温度最高值 150°C,
NEXPERIA
二极管阵列 齐纳, AEC-Q101, 100 V, 双共阳极, 300 mW, -55 °C, 150 °C, SOD-323
(EN)
DIODES INC.
单晶体管 双极, PNP, 30 V, 80 MHz, 3 W, 7 A, 200 hFE
(EN)
VISHAY
MOSFET Transistor, P Channel, -60 A, -30 V, 0.0021 ohm, -10 V, -2.3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23
(EN)
VISHAY
标准功率二极管, 单, 1 kV, 1 A, 1.1 V, 1.8 μs, 30 A
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -46 A, -40 V, 0.0083 ohm, -10 V, -2.3 V
(EN)
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 1 kV, 1 A, 单, 1.7 V, 75 ns, 30 A
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0042 ohm, -10 V, -2.5 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
快速/超快二极管, 单, 40 V, 2 A, 530 mV, 12 ns, 30 A
(EN)
VISHAY
肖特基整流器, 单, 45 V, 20 A, TO-220AC, 2 引脚, 660 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)
NEXPERIA
肖特基整流器, 双共阴极, 60 V, 1 A, SOT-1061, 3 引脚, 540 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0156 ohm, 10 V, 2.8 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
(EN)
VISHAY
肖特基整流器, 双阳极, 单, 100 V, 5 A, TO-277A, 3 引脚, 880 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)
DIODES INC.
单管二极管 齐纳, 6.8 V, 3 W, DO-214AA, 5 %, 2 引脚, 150 °C
(EN)
