规格：工作温度最高值 150°C,
VISHAY
DIODE, SCHOTTKY, 1A, 30V, MICROSMP-2
(EN)
ON SEMICONDUCTOR
肖特基整流器, 60 V, 2 A, 单, DO-214AA, 2 引脚, 630 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0116 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 30 V, 15 W, -10 A, 200 hFE
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
单管二极管 齐纳, 27 V, 550 mW, DO-214AA, 5 %, 2 引脚, 150 °C
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 35V, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 0.185 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
达林顿晶体管, NPN, 100V, TO-225
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 5 V, 2 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 25 MHz, 1.75 W, 2 A, 12000 hFE
(EN)VISHAY
MOSFET, DUAL P CHANNEL, -20V, 0.0275OHM, -8A, SOIC-8
(EN)
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 600 V, 2 A, 单, 1.7 V, 35 ns, 50 A
(EN)
ON SEMICONDUCTOR
Power MOSFET, N Channel, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)TAIWAN SEMICONDUCTOR
肖特基整流器, 100 V, 2 A, 单, DO-214AA, 2 引脚, 850 mV
(EN)
VISHAY
二极管 桥式整流, 单相, 600 V, 25 A, SIP, 1 V, 4 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
(EN)
NEXPERIA
肖特基整流器, 屏障, 单, 10 V, 2 A, SOD-323, 2 引脚, 460 mV
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 25 V, 65 MHz, 12.5 W, 5 A, 70 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0071 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.5 A, -60 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
二极管 桥式整流, 单相, 600 V, 30 A, SIP, 1.1 V, 4 引脚
(EN)
