规格：工作温度最高值 150°C,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 1 kV, 700 mohm, 10 V, 3.75 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.5 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, N沟道, 100 A, 2.4 V, 310 W, 600 V, Module
(EN)
ROHM
肖特基整流器, 30 V, 500 mA, 单, SOD-323HE, 2 引脚, 390 mV
(EN)ROHM
肖特基整流器, 60 V, 1 A, 单, SOD-323HE, 2 引脚, 670 mV
(EN)
IXYS SEMICONDUCTOR
晶体管, IGBT阵列&模块, N沟道, 100 A, 2.3 V, 450 W, 1.2 kV, SOT-227B
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0022 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV
(EN)
ROHM
快速/超快二极管, 200 V, 700 mA, 单, 850 mV, 25 ns, 15 A
(EN)ON SEMICONDUCTOR
单管二极管 齐纳, 12 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 100 hFE
(EN)
MULTICOMP
二极管, 超快恢复型, 200mA, 30V, SOT-523-3
(EN)
STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 300 V, 225 W, 100 A, 300 hFE
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 200 A, 70 V, 6 mohm, 10 V, 4 V
(EN)ROHM
肖特基整流器, 40 V, 2 A, 单, SOD-123FL, 2 引脚, 620 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
肖特基整流器, 40 V, 500 mA, 单, SOD-123, 2 引脚, 510 mV
(EN)
ON SEMICONDUCTOR
二极管 小信号, 双共阴极, 50 V, 200 mA, 1 V, 4 ns, 500 mA
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -32 V, 225 mW, -100 mA, 215 hFE
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 8.2 V, 500 mW, SOD-523, 2 引脚, 150 °C
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 15 V, 300 mW, 200 mA, 120 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 60 V, 225 mW, 100 mA, 250 hFE
(EN)
ON SEMICONDUCTOR
单管二极管 齐纳, 稳压器, 11 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, N沟道, 660 A, 2 V, 1.7 kV, Module
(EN)
